Investigation of Solution-Processed Ga₂O₃ Thin Films and their Application in Dielectric Materials

Abstract:

In this paper, polycrystal Ga2O3 thin films were grown on crystal n+-Si substrates by solution process. The XRD profile revealed that monoclinic β-Ga2O3 and rhombohedral α-Ga2O3 were coexisting in the film. The solution-process Ga2O3 film exhibited an ultrahigh transmittance (>97%) to a wavelength range of 280 nm~800 nm. The optical bandgap of ~5.0 eV and breakdown field of 4.2 MV/cm of the Ga2O3 thin film was obtained. Dielectric parameters such as capacitance, dielectric permittivity and loss tangent were investigated. It was observed that these parameters have a strong dependence on frequency.

• Periodical: Materials Science Forum (Volume 1014)
• Pages: 27-32
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1014.27
• Online since: November 2020
• Authors: Guang Shuo Cai*, Yan Li Pei, Sheng Dong Zhang
• Keywords: Dielectric, Ga₂O₃ Thin Film, Polycrystal, Solution Process

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