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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Characterisation of an SiO2/Si Interface with Slow...

Characterisation of an SiO₂/Si Interface with Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1451-1454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1451

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Online since:

January 1992

Authors:

D.L. Smith, C. Smith, P.C. Rice-Evans, J.H. Evans-Freeman, Hugh E. Evans

Keywords:

Charge Density, Drift-Diffusion Model, Electric Field, Interface, Low-Energy Positron Beam, Silicon Dioxide on Silicon

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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