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Electric Field Effects in Positron Diffusion and Annihilation in the Laminar Substances
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Implantation and Diffusion in Thin Films
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Annealing of Silicon Implantation Damage in Indium Phosphide
p.1435

Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
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Positron Beam Studies on Cadmium Mercury Telluride
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Annealing of Silicon Implantation Damage in Indium...

Annealing of Silicon Implantation Damage in Indium Phosphide

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1435-1438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1435

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Online since:

January 1992

Authors:

P.J. Simpson, U.G. Akano, P.J. Schultz, I.V. Mitchell

Keywords:

Annealing, Defect Profiling, Indium Phosphide, Ion Implantation, Radiation Damage

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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