Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

1439-1442

DOI:

10.4028/www.scientific.net/MSF.105-110.1439

Citation:

P.J. Simpson et al., "Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption ", Materials Science Forum, Vols. 105-110, pp. 1439-1442, 1992

Online since:

January 1992

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$35.00

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