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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Ion Implantation Damage in Silicon Studied Using...

Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1439-1442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1439

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Online since:

January 1992

Authors:

P.J. Simpson, M. Vos, I.V. Mitchell, C. Wu, P.J. Schultz

Keywords:

Defect Profiling, Infrared Adsorption, Ion Implantation, Radiation Damage, Rutherford Backscattering, Silicon

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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