Paper Titles

Implantation and Diffusion in Thin Films
p.1431

Annealing of Silicon Implantation Damage in Indium Phosphide
p.1435

Ion Implantation Damage in Silicon Studied Using Slow Positrons, RBS and Infrared Absorption
p.1439

Positron Beam Studies on Cadmium Mercury Telluride
p.1443

Positron Beam Measurements on Hydrogen Implanted Silicon
p.1447

Characterisation of an SiO₂/Si Interface with Slow Positrons
p.1451

Positron Lifetimes on Clean Metallic Surfaces
p.1455

Investigation of Near Surface Defects by Variable-Energy Positron Lifetime Spectroscopy
p.1459

Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam
p.1463

HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Positron Beam Measurements on Hydrogen Implanted...

Positron Beam Measurements on Hydrogen Implanted Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-9

Info:

Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1447-1450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1447

Citation:

Cite this paper

Online since:

January 1992

Authors:

D.L. Smith, Hugh E. Evans, C. Smith, P.C. Rice-Evans, J.H. Evans-Freeman

Keywords:

Defect, Depth Distributions, Implanted M⁺-Ions, Positron Beam Diffusion Model Analysis, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: