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HomeMaterials Science ForumMaterials Science Forum Vol. 1055Growth of III-V Antimonide Heterostructure...

Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode

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Abstract:

Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic electrical characteristics of InAs-GaSb core-shell nanowire which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.

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Periodical:

Materials Science Forum (Volume 1055)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-y19917

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Online since:

March 2022

Authors:

Deepak Anandan, Che-Wei Hsu, Edward Yi Chang*

Keywords:

Core-Shell, InAs/GaSb, InAs/InSb, Nanowire, Negative Differential Resistance, Tunnel Diode

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© 2022 Trans Tech Publications Ltd. All Rights Reserved

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