Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric

Jui Sheng Wu; Edward Yi Chang

doi:10.4028/p-180hme

Paper Titles

Preface

Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode
p.1

Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric
p.7

Fabrication and Characterization of Thin-Film ZnO/Cu-O Heterostructure Prepared by Spin Coating Technique
p.13

Multi-Walled Carbon Nanotube/Polydimethylsiloxane Composite by Simple Solution Mixing Method
p.19

Microstructure Evaluation of Photovoltaic Solar Panel’s Interconnection: A Review
p.27

Effects of Fabrication Techniques and Durability Performance on Resistance of Fibre-based PEDOT:PSS/GO pH Sweat Sensor
p.37

Utilizing Sulfonated Reduced Graphene Oxide as a Dopant to Enhance Perovskite Grain Sizes
p.47

Facile Fabrication of the Glass Substrate Coated Nitrogen-doped TiO₂ Spheres/Polytetrafluoroethylene Based on Hydrophobic-Photocalatytic Self-Cleaning Properties
p.53

HomeMaterials Science ForumMaterials Science Forum Vol. 1055Demonstration of High Interface Quality AlGaN/GaN...

Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric

Abstract:

In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low V_th hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a V_th of-1.5 V, a high I_d_,max of 771mA/mm and a R_ON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.

You might also be interested in these eBooks

Nanomaterials and Nanotechnology for Sustainable Development

View Preview

Info:

Periodical:

Materials Science Forum (Volume 1055)

Pages:

7-12

DOI:

https://doi.org/10.4028/p-180hme

Citation:

Cite this paper

Online since:

March 2022

Authors:

Jui Sheng Wu*, Edward Yi Chang

Keywords:

AlGaN/GaN HEMT, MIS-HEMT, Wet Recess

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. J. Chen, O. Häberlen, A. Lidow, C. L. Tsai, T. Ueda, Y. Uemoto, and Y. Wu, GaN-on-Si power technology: Devices and applications,, IEEE Trans. Electron Devices, vol. 64, no. 3, p.779–795, Mar. 2017,.

DOI: 10.1109/ted.2017.2657579

Google Scholar

[2] U. K. Mishra, P. Parikh, and Yi-Feng Wu, AlGaN/GaN HEMTs-an overview of device operation and applications,, Proc. IEEE, vol. 90, no. 6, p.1022–1031, June. 2002,.

DOI: 10.1109/jproc.2002.1021567

Google Scholar

[3] T. Oka and T. Nozawa, AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications,, IEEE Electron Device Lett., vol. 29, no. 7, p.668–670, Jul. 2008,.

DOI: 10.1109/led.2008.2000607

Google Scholar

[4] Q. Zhou, B. Chen, Y. Jin, S. Huang, K. Wei, X. Liu, X. Bao, J. Mou, and B. Zhang, High-performance enhancement-mode Al2O3/AlGaN/GaNon-Si MISFETs with 626 MW/cm2 Figure of Merit,, IEEE Trans. Electron Devices, vol. 62, no. 3, p.776–781, Mar. 2015, doi: 10.1109/ TED.2014.2385062.

DOI: 10.1109/ted.2014.2385062

Google Scholar

[5] H. Okita, M. Hikita, A. Nishio, T. Sato, K. Matsunaga, H. Matsuo, M. Mannoh, and Y. Uemoto, Through recessed and regrowth gate technology for realizing process stability of GaN-GITs," in Proc. 28th Int. Symp. Power Semiconductor Devices IC,s (ISPSD), Jun. 2016, p.23–26,.

DOI: 10.1109/ispsd.2016.7520768

Google Scholar

[6] Z. Tang, Q. Jiang, Y. Lu, S. Huang, S. Yang, X. Tang, and K. J. Chen, 600-V normally OFF SiNx /AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,, IEEE Electron Device Lett., vol. 34, no. 11, p.1373–1375, Nov. 2013,.

DOI: 10.1109/led.2013.2279846

Google Scholar

[7] Z. Zhang, K. Fu, X. Deng, X. Zhang, Y. Fan, S. Sun, L. Song, Z. Xing, W. Huang, G. Yu, Y. Cai, and B. Zhang, Normally Off AlGaN/GaN MIS-high-electron mobility transistors fabricated by using low pressure chemical vapor deposition Si3N4 gate dielectric and standard fluorine ion implantation,, IEEE Electron Device Lett., vol. 36, no. 11, p.1128–1131, Nov. 2015,.

DOI: 10.1109/led.2015.2483760

Google Scholar

[8] Ching-Hui Chena and Stacia Keller, Elaine D. Haberer, Lidong Zhang, Steven P. DenBaars, Evelyn L. Hu, and Umesh K. Mishra, Yifeng Wu Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors, JVTBD9, Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17, 2755, Nov. 1999,.

DOI: 10.1116/1.591058

Google Scholar

[9] Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen, A GaN HEMT structure allowing self-terminated, plasma-free etching for high-uniformity, high mobility enhancement-mode devices,, IEEE Electron Device Lett., vol. 37, no. 4, pp.377-380, Apr. 2016,.

DOI: 10.1109/led.2016.2533422

Google Scholar

[10] W. Guo, 1, R. Kirste, I. Bryan, Z. Bryan, L. Hussey, P. Reddy, J. Tweedie, R. Collazo, and Z. Sitar, KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode, Appl. Phys. Lett. 106, 082110, 2015,.

DOI: 10.1063/1.4913705

Google Scholar

[11] Yung-Yu, Lai Shih-Chieh, Hsu Hua-Sheng, Chang Yew Chung, Sermon Wu, Ching-Hsiang Chen, Liang-Yih Chen, Yuh-Jen Cheng, The study of wet etching on GaN surface by potassium hydroxide solution, Res. Chem. Intermed., vol. 43, p.3563–3572, Feb. 2016,.

DOI: 10.1007/s11164-016-2430-1

Google Scholar

[12] Jingqian Liu, Jinyan Wang, Zhe Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure, Electronics Letters, vol. 51, no. 23, p.1932–1933, Nov. 2015,.

DOI: 10.1049/el.2015.1755

Google Scholar

[13] Chen, Y., Song, H., Li, D., Sun, X., Jiang, H., Li, Z., Miao, G., Zhang, Z., & Zhou, Y., Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD,, Mater. Lett., vol. 114, p.26–28, 2014,.

DOI: 10.1016/j.matlet.2013.09.096

Google Scholar