Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds

Alexandre Savtchouk; Marshall Wilson; Dmitriy Marinskiy; Bret Schrayer; Carlos Almeida; Jacek Lagowski

doi:10.4028/p-3bn937

Paper Titles

Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
p.23

PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
p.31

Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
p.37

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
p.45

Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
p.51

Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
p.57

Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers
p.63

Evaluation of Crystal Quality and Dopant Activation of Smart Cut^TM - Transferred 4H-SiC Thin Film
p.71

Accurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nm
p.81

HomeMaterials Science ForumMaterials Science Forum Vol. 1089Recent Progress in Non-Contact Electrical...

Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds

Abstract:

An increasing interest in the non-contact corona charge-based electrical characterization technique, CnCV, for wide bandgap semiconductors, is justified by the reduction of cost and the reduction of testing feedback time [1]. In addition, the technique expands measurement capabilities. Regarding SiC, recent progress includes expanded dopant concentration range and dopant measurement on fresh epitaxial wafers. The latter is made possible with an ultraviolet wafer pretreatment technique [2]. The novel applications to AlGaN/GaN HEMT on insulating substrates demonstrate the benefits of a noninvasive top side edge contact, TSEC [3], that eliminates the problem of the floating surface potential. This development enables a unique three variable, charge-voltage-capacitance (Q-V-C), characterization of AlGaN/GaN on sapphire and SI-SiC. The quasistatic CnCV measurement, not affected by series resistance, is shown to be suitable for wafer mapping of HEMT parameters. The CnCV version with TSEC can be combined with an eddy current technique enabling non-contact 2DEG mobility measurements vs. electron sheet density.

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Periodical:

Materials Science Forum (Volume 1089)

Pages:

51-56

DOI:

https://doi.org/10.4028/p-3bn937

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Online since:

May 2023

Authors:

Alexandre Savtchouk*, Marshall Wilson, Dmitriy Marinskiy, Bret Schrayer, Carlos Almeida, Jacek Lagowski

Keywords:

Algan/GaN HEMT on Insulating Substrate, CnCV, Corona Non-Contact C-V

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Creative Commons CC BY 4.0

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* - Corresponding Author

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DOI: 10.35848/1347-4065/ac41ca

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