Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
p.3
p.3
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
p.9
p.9
Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
p.15
p.15
Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
p.23
p.23
PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
p.31
p.31
Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
p.37
p.37
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
p.45
p.45
Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
p.51
p.51
Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators
p.57
p.57
PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
Abstract:
Photoluminescence (PL) signatures of 4H-SiC bare and epitaxial wafers from a surface inspection tool have been studied. Large variations in PL black or white dot densities were confirmed for comparable crystal quality and growth process conditions. Comparison with KOH etching results confirms that both PL black and white dots are tied to discrete threading dislocations. PL spectra results suggest dislocation decoration by donor-acceptor pairs.
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Periodical:
Materials Science Forum (Volume 1089)
Pages:
31-35
Citation:
Online since:
May 2023
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