Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators

Sergio Sapienza; Matteo Ferri; Luca Belsito; Diego Marini; Marcin Zielinski; Francesco La Via; Alberto Roncaglia

doi:10.4028/p-3g82bg

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HomeMaterials Science ForumMaterials Science Forum Vol. 1089Correlation between Q-Factor and Residual Stress...

Correlation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam Resonators

Abstract:

In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both <100> and <111> silicon substrates, using a completely optical measurement setup to measure the Q-factor of the resonators and the residual stress of the layers by means of purposely designed micromachined test structures. From the measurements, a clear correlation appears between the residual stress of the SiC layer and the Q-factor of the resonators, with Q-factor values above half a million for resonators fabricated on <111> substrates, showing residual stress around 1 GPa.

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Periodical:

Materials Science Forum (Volume 1089)

Pages:

57-61

DOI:

https://doi.org/10.4028/p-3g82bg

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Cite this paper

Online since:

May 2023

Authors:

Sergio Sapienza*, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

Keywords:

3C-SiC, MEMS, Q-Factor, Residual Stress

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* - Corresponding Author

References

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