Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction

Yann Jousseaume; François Cauwet; Judith Woerle; Ulrike Grossner; Sofia Aslanidou; Gemma Rius; Philippe Godignon; Gabriel Ferro

doi:10.4028/p-5p6o3j

Paper Titles

Preface

Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
p.3

Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
p.9

Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
p.15

Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
p.23

PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
p.31

Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
p.37

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
p.45

Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
p.51

HomeMaterials Science ForumMaterials Science Forum Vol. 1089Controlled Macrostepping of Si-Face 4°off 4H-SiC...

Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction

Abstract:

The reconstruction of 4°off 4H-SiC surfaces was investigated using Si melting at 1550°C in a SiC/Si/SiC sandwich configuration. Despite systematically obtaining a macrostepped morphology over the entire areas in contact with the liquid Si, the steps were found wavy when using as-received 4H-SiC wafers. The regularity and straightness of the steps were significantly improved when the surface reconstruction was performed on processed surfaces: on re-polished surfaces the steps were found to be regular and straight in some cases, while this was constantly observed on as-grown epitaxial layers. After a reconstruction process of 2h, the best regularity of the steps was obtained with an average width of ̴ 3-5 μm. Increasing the processed area from 1.44 to 4 cm² did not affect the results which suggests a good scalability of the process.

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Periodical:

Materials Science Forum (Volume 1089)

Pages:

9-14

DOI:

https://doi.org/10.4028/p-5p6o3j

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Online since:

May 2023

Authors:

Yann Jousseaume*, François Cauwet, Judith Woerle, Ulrike Grossner, Sofia Aslanidou, Gemma Rius, Philippe Godignon, Gabriel Ferro

Keywords:

4H Silicon Carbide (SiC), Macrostepped Morphology, Surface Structuring

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* - Corresponding Author

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