Preface
Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
p.3
p.3
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction
p.9
p.9
Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
p.15
p.15
Quantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiC
p.23
p.23
PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
p.31
p.31
Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing
p.37
p.37
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
p.45
p.45
Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds
p.51
p.51
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 1089)
Online since:
May 2023
Сopyright:
© 2023 Trans Tech Publications Ltd. All Rights Reserved
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