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HomeMaterials Science ForumMaterials Science Forum Vol. 1089Evaluation of Hysteresis Response in Achiral Edges...

Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC

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Abstract:

Hysteresis response of epitaxially grown graphene nanoribbons devices on semi-insulating 4H-SiC in the armchair and zigzag directions is evaluated and studied. The influence of the orientation of fabrication and dimensions of graphene nanoribbons on the hysteresis effect reveals the metallic and semiconducting nature graphene nanoribbons. The hysteresis response of armchair based graphene nanoribbon side gate and top gated devices implies the influence of gate field electric strength and the contribution of surface traps, adsorbents, and initial defects on graphene as the primary sources of hysteresis. Additionally, passivation with AlO_x and top gate modulation decreased the hysteresis and improved the current-voltage characteristics.

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Periodical:

Materials Science Forum (Volume 1089)

Pages:

15-22

DOI:

https://doi.org/10.4028/p-i2s1cm

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Online since:

May 2023

Authors:

Sobin Mathew, Saadman Abedin, Vladislav Kurtash, Sergey P. Lebedev, Alexander A. Lebedev, Bernd Hähnlein, Jaqueline Stauffenberg, Heiko O. Jacobs, Jörg Pezoldt*

Keywords:

Charge Trapping, Epitaxial Graphene, Field Effect Transistor, Graphene Nanoribbons, Hysteresis

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