For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
p.127
NO Annealing Simulation of 4H-SiC/SiO2 by Charge-Transfer Type Molecular Dynamics
p.135
Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment
p.141
High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition
p.147
Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC
p.153
Hypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate Stress
p.159
Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor
p.165
Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs
p.171
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
p.179

Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC

Article Preview

Abstract:

We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the bulk mobility/resistivity in the temperature range of 200-500K. We observe that temperature dependence of bulk resistivity cannot be predicted by popular mobility models available within TCAD tools. A careful investigation reveals that these popular mobility models need to be revised and replaced by a comprehensive model that can describe the impurity scattering effects dominant at low temperatures. We present a well calibrated bulk mobility model for 4H-SiC exhibiting excellent agreement with measured data, making it suitable for device simulation purposes using TCAD tools.

By email View Pdf
You might also be interested in these eBooks
International Conference on Silicon Carbide and Related Materials ICSCRM 2022 View Preview
Silicon Carbide MOSFETs and Special Materials View Preview

Info:

Periodical:

Materials Science Forum (Volume 1090)

Pages:

153-157

DOI:

https://doi.org/10.4028/p-1my2o8

Citation:

Cite this paper

Online since:

May 2023

Authors:

Hemant Dixit*, Daniel J. Lichtenwalner, Andreas Scholtze, Jae Hyung Park, Steven Rogers, Simon Bubel, Sei Hyung Ryu

Keywords:

Bulk Mobility, Hall Measurement, Incomplete Ionization, Resistivity, TCAD

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] Stefanakis, D. et.al. Microelectronic Engineering, 116, 65-71, (2014).

Google Scholar

[2] Ivanov, I.V., and Kozlov, A.G. 2019 International Siberian Conference on Control and Communications (SIBCON) (pp.1-5). IEEE (2019).

Google Scholar

[3] Caughey, D. M., and R. E. Thomas. Proceedings of the IEEE, Vol. 55, 2192–2193 (1967).

Google Scholar

[4] Arora, N. D., J. R. Hauser, and D. J. Roulston, IEEE Transactions on Electron Devices, Vol. 29 292–295 (1982).

Google Scholar

[5] Klaassen, D. B. M. Solid-State Electronics, 35(7), 953-959 (1992).

Google Scholar

[6] Klaassen, D. B. M. Solid-State Electronics, 35(7), 961-967 (1992).

Google Scholar

[7] SILVACO TCAD Software : https://silvaco.com/tcad/

DOI: 10.1142/9789813237834_0003

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.