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HomeMaterials Science ForumMaterials Science Forum Vol. 1090Outlook for Dielectric/SiC Interfaces for Future...

Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs

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Abstract:

Silicon carbide (SiC) metal-oxide semiconductor (MOS) power devices such as metal-oxide semiconductor field-effect transistors (MOSFETs) require a stable and low defect-density interface, and a high-quality dielectric, for good device performance and reliability. Notably, the interface and dielectric properties determine the threshold voltage stability, the field-effect channel mobility, and the device lifetime as limited by dielectric breakdown in both the forward on-state and reverse blocking conditions. Here we discuss the present state of SiC MOS processing and properties and point to directions for future development. Important items to address are: 1) interface passivation approaches; 2) dielectrics; 3) device design; and 4) in-depth measurements of the interface quality and reliability.

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Periodical:

Materials Science Forum (Volume 1090)

Pages:

93-100

DOI:

https://doi.org/10.4028/p-3w3s88

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Online since:

May 2023

Authors:

Daniel J. Lichtenwalner*, Sei Hyung Ryu, Brett Hull, Scott Allen, John W. Palmour

Keywords:

Channel Mobility, Dielectrics, Interface, Metal-Oxide-Semiconductor

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* - Corresponding Author

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