Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Li Jung Lin; Bing Yue Tsui

doi:10.4028/p-se77bl

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HomeMaterials Science ForumMaterials Science Forum Vol. 1090Influence of Post-Ion-Implantation Annealing...

Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Abstract:

The effect of post-ion implantation annealing on the properties of the SiO₂/4H-SiC interface is examined in this paper. It is observed that the surface roughness degrades after the high-temperature Ar annealing, but the oxidation process after the high temperature annealing can improve the surface roughness. To better understand the effect of high-temperature annealing on the gate oxide, the reliability of gate oxide is further studied. The results show that although the surface roughness degrades after high-temperature annealing, the interface state density, tunneling barrier height, breakdown field, and critical electric field for the 10-year lifetime of the thermally grown gate oxide do not degrade.

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Periodical:

Materials Science Forum (Volume 1090)

Pages:

107-111

DOI:

https://doi.org/10.4028/p-se77bl

Citation:

Cite this paper

Online since:

May 2023

Authors:

Li Jung Lin, Bing Yue Tsui*

Keywords:

Interface State Density, MOS Capacitor, Post-Ion-Implantation Annealing, Silicon Carbide, SiO₂/ 4H-SiC Interface, Surface Roughness, Time-Dependent Dielectric Breakdown

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* - Corresponding Author

References

[1] M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe ( New York: Wiley. 2001), pp.31-47.

Google Scholar

[2] A. Q. Huang, "Power Semiconductor Devices for Smart Grid and Renewable Energy Systems," in Proceedings of the IEEE, vol. 105, no. 11, pp.2019-2047, Nov. 2017.

DOI: 10.1109/jproc.2017.2687701

Google Scholar

[3] J. Senzaki, K. Fukuda, and K. Arai, "Influences of postimplantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H–SiC," J. Appl. Phys., vol.94, pp.2942-2947, 2003.

DOI: 10.1063/1.1597975

Google Scholar

[4] K. A. Jones, M. C. Wood, T. S. Zheleva, K. W. Kirchner, M. A. Derenge, A. Bolonikov, T. S. Sudarshan, R. D. Vispute, S. S. Hullavarad, and S. Dhar. "Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC." Materials Science Forum, vol.556-557, pp.575-578, 2007.

DOI: 10.4028/www.scientific.net/msf.556-557.575

Google Scholar

[5] B. Y. Tsui, Y. T. Huang, T. L. Wu, and C. H. Chien, "Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation Processes," Microelectronics Reliability, vol.123, no.8, p.114186, 2021.

DOI: 10.1016/j.microrel.2021.114186

Google Scholar