Structural and Electrical Properties of the Ga 0.68 in 0.32 P / GaAs Heterojunction Grown by Mombe

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Periodical:

Materials Science Forum (Volumes 126-128)

Edited by:

Ph. Komninou and A. Rocher

Pages:

579-582

DOI:

10.4028/www.scientific.net/MSF.126-128.579

Citation:

N. Frangis et al., "Structural and Electrical Properties of the Ga 0.68 in 0.32 P / GaAs Heterojunction Grown by Mombe", Materials Science Forum, Vols. 126-128, pp. 579-582, 1993

Online since:

January 1993

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