Copper Precipitation at the Silicon/Silicon Dioxide Interface: Microstructure and Electrical Properties

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Periodical:

Materials Science Forum (Volumes 126-128)

Edited by:

Ph. Komninou and A. Rocher

Pages:

591-594

DOI:

10.4028/www.scientific.net/MSF.126-128.591

Citation:

A. Correia et al., "Copper Precipitation at the Silicon/Silicon Dioxide Interface: Microstructure and Electrical Properties", Materials Science Forum, Vols. 126-128, pp. 591-594, 1993

Online since:

January 1993

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$35.00

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