Damage Assessment of Dry Etched III-V Semiconductors for Nanoelectronics

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Periodical:

Materials Science Forum (Volumes 140-142)

Edited by:

J. J. Pouch and S. A. Alterovitz

Pages:

619-640

DOI:

10.4028/www.scientific.net/MSF.140-142.619

Citation:

R. Cheung "Damage Assessment of Dry Etched III-V Semiconductors for Nanoelectronics", Materials Science Forum, Vols. 140-142, pp. 619-640, 1993

Online since:

October 1993

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$35.00

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