The Bound Exciton Model for Isoelectronic Centers in Silicon

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

105-110

Citation:

G. Davies and M. H. Nazaré, "The Bound Exciton Model for Isoelectronic Centers in Silicon", Materials Science Forum, Vols. 143-147, pp. 105-110, 1994

Online since:

October 1993

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$38.00

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