Paper Titles

Boron in Cubic Silicon Carbide: Dynamic Effects in ESR
p.81

ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
p.87

Iron Acceptors in Gallium Nitride (GaN)
p.93

Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study
p.99

The Bound Exciton Model for Isoelectronic Centers in Silicon
p.105

Near-Surface Reactions of Gold and Silver in Silicon
p.111

A New Photoluminescent Center in Mercury-Doped Silicon
p.117

Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon
p.123

Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers
p.129

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Bound Exciton Model for Isoelectronic Centers...

The Bound Exciton Model for Isoelectronic Centers in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

105-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.105

Citation:

Cite this paper

Online since:

October 1993

Authors:

Gordon Davies, Maria Helena Nazaré

Keywords:

Isoelectronic Centre, Luminescence, Silicon, Uniaxial Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: