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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Boron in Cubic Silicon Carbide: Dynamic Effects in...

Boron in Cubic Silicon Carbide: Dynamic Effects in ESR

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

81-86

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.81

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Online since:

October 1993

Authors:

V. Bratus, N.P. Baran, V.M. Maksimenko, T. Petrenko, V. Romanenko

Keywords:

Boron Defect, Electron Spin Resonance, Reorientation, Silicon Carbide (SiC)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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