Paper Titles

Titanium Impurity in Diamond
p.41

Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects
p.45

Nitrogen and Nitrogen-Vacancy Complexes in Diamond
p.51

Time Resolved Photoluminescence and Optically Detected Magnetic Resonance Investigations on Synthetic Diamond
p.57

Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC
p.63

Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)
p.69

Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide
p.75

Boron in Cubic Silicon Carbide: Dynamic Effects in ESR
p.81

ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
p.87

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Endor and ODEPR Investigation of the Microscopic...

Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

63-68

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.63

Citation:

Cite this paper

Online since:

October 1993

Authors:

J. Reinke, Ralf Müller, M. Feege, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

6H-SiC, Acceptor, ENDOR, Optically Detected EPR

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: