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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147ODMR Studies of MOVPE-Grown GaN Epitaxial Layers

ODMR Studies of MOVPE-Grown GaN Epitaxial Layers

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

87-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.87

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Online since:

October 1993

Authors:

M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano

Keywords:

Gallium Nitride (GaN), MOVPE, ODMR, Photoluminescence (PL)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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