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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Vacancies and {V,Hn} Complexes in Si: Stable...

Vacancies and {V,H_n} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1227-1232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1227

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Online since:

October 1993

Authors:

M.A. Roberson, S.K. Estreicher, L. Korpás, J.W. Corbett

Keywords:

H Diffusion, V Diffusion, Vacancies in Si, V-H Interactions

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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