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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Relative Stability of HT vs. H* and HT2 vs. H*2 in...

Relative Stability of H^T vs. H^* and H^T₂ vs. H^*₂ in c-C, Si, Ge and α-Sn and Their Consequences

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1245-1250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1245

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Online since:

October 1993

Authors:

Djordje M. Maric, M.A. Roberson, S.K. Estreicher

Keywords:

Ge, H in c-C, Passivation, Silicon, α-Sn

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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