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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Polarized Photoluminescence in Highly Si-Doped...

Polarized Photoluminescence in Highly Si-Doped GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1269-1274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1269

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Online since:

October 1993

Authors:

Masashi Suezawa, Y. Nishina, Koji Sumino

Keywords:

Cluster, Excitation, GaAs, Photoluminescence (PL), Polarisation, Silicon

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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