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Paper Titles
The Nature of Trigonal Centers in Iron-Doped p-Type Silicon
p.1233
Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
p.1239
Relative Stability of HT vs. H* and HT2 vs. H*2 in c-C, Si, Ge and α-Sn and Their Consequences
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On the Pairing between Indium and Carbon Atoms in Silicon
p.1251
Iron-Phosphorus Interaction in Si
p.1257
Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
p.1263
Polarized Photoluminescence in Highly Si-Doped GaAs
p.1269
Phenomenon of Two-Step Alignment of VGaSnGa Complexes in GaAs under Uniaxial Pressure
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Photoexcitation of Defects Related to B in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Iron-Phosphorus Interaction in Si

Iron-Phosphorus Interaction in Si

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1257-1262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1257

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Online since:

October 1993

Authors:

H. Takahashi, Masashi Suezawa, Koji Sumino

Keywords:

Diffusion, Fe, Gettering, P, Silicon

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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