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Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation
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Optical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te
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Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te
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Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds
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Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO
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Metal Vacancies in Li and In Doped ZnSe and CdS
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Time-Resolved Excitation Spectroscopy of...

Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

441-446

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.441

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Online since:

October 1993

Authors:

Gediminas Račiukaitis, Dainius Juodžbalis

Keywords:

Defect, Excitation Spectra, Luminescence, ZnSe:Te

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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