Paper Titles

Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te
p.441

Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds
p.447

Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO
p.453

Metal Vacancies in Li and In Doped ZnSe and CdS
p.459

A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers
p.465

Defect Control in Relaxed, Graded GeSi/Si
p.471

Origin of Mosaic Structure in Relaxed Si_1-xGe_x Layers
p.483

Point Defects in SiGe Epitaxial Layers and Bulk Crystals
p.489

Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy
p.495

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147A Positron Annihilation Study of Defects in ZnO...

A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

465-470

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.465

Citation:

Cite this paper

Online since:

October 1993

Authors:

Jue Zhong, Peter Mascher, Werner Puff, A.H. Kitai

Keywords:

Cathodoluminescence, Positron Annihilation, Vacancy Complexes, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: