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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Origin of Mosaic Structure in Relaxed Si1-xGex...

Origin of Mosaic Structure in Relaxed Si_1-xGe_x Layers

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

483-488

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.483

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Online since:

October 1993

Authors:

Patricia M. Mooney, F.K. LeGoues, J.O. Chu

Keywords:

Dislocation, High Resolution X-Ray Diffraction (HR-XRD), SiGe Layers

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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