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Strain Relaxation During Epitaxial Crystallization of Ge_xSi_1-x Alloy Layers Produced by Ion-Implantation
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Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Test for the Impurity Wavefunction Modelling from...

Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

501-506

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.501

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Online since:

October 1993

Authors:

Jerzy M. Langer, Ryszard Buczko

Keywords:

Acceptor, AlGaAs, Effective Mass Theory, Wavefunction

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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