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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Rapid Thermal Annealing of Ion Implanted Strained...

Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

513-518

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.513

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Online since:

October 1993

Authors:

E.V. Thomsen, Arne Nylandsted-Larsen, J.L. Hansen, P. Kringhøj, S.Y. Shiryaev, G. Weyer

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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