Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

507-512

DOI:

10.4028/www.scientific.net/MSF.143-147.507

Citation:

R.G. Elliman and W.C. Wong, "Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation", Materials Science Forum, Vols. 143-147, pp. 507-512, 1994

Online since:

October 1993

Export:

Price:

$35.00

In order to see related information, you need to Login.