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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Strain Relaxation During Epitaxial Crystallization...

Strain Relaxation During Epitaxial Crystallization of Ge_xSi_1-x Alloy Layers Produced by Ion-Implantation

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

507-512

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.507

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Online since:

October 1993

Authors:

R.G. Elliman, W.C. Wong

Keywords:

Defect, Germanium, Ion Implantation, Relaxation, Silicon, Strain

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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