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Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x
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Diffusion, Interface Mixing and Schottky Barrier Formation
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Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Diffusion, Interface Mixing and Schottky Barrier...

Diffusion, Interface Mixing and Schottky Barrier Formation

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

519-530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.519

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Online since:

October 1993

Authors:

W. Walukiewicz

Keywords:

Diffusion, Dopant Activation, Native Defects

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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