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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Defect Characterization in P Isotype Si/SiGe/Si...

Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

495-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.495

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Online since:

October 1993

Authors:

G. Bremond, A. Souifi, P. Degroodt, P. Warren, D. Dutartre, Gérard Guillot

Keywords:

Band Offset, Deep Level, Dislocation, DLTS, Heterostructure, Interface States (or Traps), Silicon-Germanium (SiGe)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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