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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Point Defects in SiGe Epitaxial Layers and Bulk...

Point Defects in SiGe Epitaxial Layers and Bulk Crystals

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

489-494

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.489

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Online since:

October 1993

Authors:

H.B. Erzgräber, G. Kissinger, D. Krüger, T. Morgenstern, K. Schmalz, J. Schilz, M. Kurten, A. Osinsky

Keywords:

DLTS, Extended Defects, Impurity, PL, Point Defect, SiGe Alloys

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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