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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Incorporation and Interaction of Hydrogen with...

Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

447-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.447

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Online since:

October 1993

Authors:

L. Svob, Y. Marfaing, B. Clerjaud, D. Côte, D. Ballutaud, B. Theys, R. Druilhe, W. Kuhn, H. Stanzl, W. Gebhardt

Keywords:

Acceptor Impurities, Hydrogen Complexes, II-VI Semiconductors, MOCVD Growth

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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