For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature
p.731
Energy Levels and Excitation Mechanisms of Yb3+ Ions in InP1-xAsx Alloys
p.737
Time Decay Study of the Er3+-Related Luminescence in In1-xGaxP
p.743
Er-4f Luminescence Excitation and Quenching Mechanisms in GaAs
p.749
Photoluminescence Study of the 779-meV Band in Silver-Doped Silicon
p.755
Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon
p.761
Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor
p.767
Photoluminescence from Silver-Related Defects in Silicon
p.773
Electronic Structure of Copper-Related Defects in Germanium
p.779

Photoluminescence Study of the 779-meV Band in Silver-Doped Silicon

Article Preview

Abstract:

You might also be interested in these eBooks
Defects in Semiconductors 17 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

755-760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.755

Citation:

Cite this paper

Online since:

October 1993

Authors:

Ingrid de Maat-Gersdorf, T. Gregorkiewicz, C.A.J. Ammerlaan

Keywords:

Metal Impurities, Photoluminescence (PL), Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.