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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Er-4f Luminescence Excitation and Quenching...

Er-4f Luminescence Excitation and Quenching Mechanisms in GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

749-754

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.749

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Online since:

October 1993

Authors:

D.W. Elsaesser, J.E. Colon, Y.K. Yeo, R.L. Hengehold, G.S. Pomrenke

Keywords:

Deep Level, DLTS, ER, Erbium, Excitation, GaAs, Hole Trap, Photoluminescence (PL)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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