Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

767-772

DOI:

10.4028/www.scientific.net/MSF.143-147.767

Citation:

A. I. Ryskin "Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor", Materials Science Forum, Vols. 143-147, pp. 767-772, 1994

Online since:

October 1993

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