The Application of High Resolution X-Ray Diffraction for the Investigation of the Process of Elastic Strain Relaxation in InGaAs Quantum Well

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Periodical:

Materials Science Forum (Volumes 166-169)

Edited by:

R. Delhez and E.J. Mittemeijer

Pages:

293-298

DOI:

10.4028/www.scientific.net/MSF.166-169.293

Citation:

N. Faleev et al., "The Application of High Resolution X-Ray Diffraction for the Investigation of the Process of Elastic Strain Relaxation in InGaAs Quantum Well", Materials Science Forum, Vols. 166-169, pp. 293-298, 1994

Online since:

July 1994

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$35.00

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