Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation

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Periodical:

Materials Science Forum (Volumes 173-174)

Edited by:

M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner

Pages:

29-34

DOI:

10.4028/www.scientific.net/MSF.173-174.29

Citation:

I. Ulrych et al., "Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation", Materials Science Forum, Vols. 173-174, pp. 29-34, 1995

Online since:

September 1994

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$35.00

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