Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching

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Periodical:

Materials Science Forum (Volumes 173-174)

Edited by:

M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner

Pages:

23-28

DOI:

10.4028/www.scientific.net/MSF.173-174.23

Citation:

J. Boulmer et al., "Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching ", Materials Science Forum, Vols. 173-174, pp. 23-28, 1995

Online since:

September 1994

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$35.00

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