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HomeMaterials Science ForumMaterials Science Forum Vols. 173-174Modification of Foreign Atom Concentrations and...

Modification of Foreign Atom Concentrations and Profiles in Silicon and Si_1-x-y Ge_xC_y Alloys by Laser Chemical Etching

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Periodical:

Materials Science Forum (Volumes 173-174)

Pages:

23-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.173-174.23

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Online since:

September 1994

Authors:

J. Boulmer, A. Desmur, B. Bourguignon, J.-B. Ozenne, R. Laval, A. Aliouchouche, D. Débarre, J.-P. Budin

Keywords:

Chemisorption, Energy Dispersive X-Ray (EDX), Etching, Laser Desorption, Laser Etching, Laser Melting, SiGeC, Silicon, Silicon-Germanium (SiGe), SIMS

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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