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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Oscillator Strengths and Linewidths of Shallow...

Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

121-126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.121

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Online since:

November 1995

Authors:

Boris A. Andreev, E.B. Kozlov, T.M. Lifshits

Keywords:

Ge, Infrared Absorption, PTIS, Shallow Impurity, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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