Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

145-150

DOI:

10.4028/www.scientific.net/MSF.196-201.145

Citation:

A.S. Kaminskii and E.V. Lavrov, "Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon", Materials Science Forum, Vols. 196-201, pp. 145-150, 1995

Online since:

November 1995

Export:

Price:

$35.00

In order to see related information, you need to Login.