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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Excitons Bound to Isoelectronic C3V-Defects B480...

Excitons Bound to Isoelectronic C_3V-Defects B⁴₈₀ (1.1068 eV) in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

145-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.145

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Online since:

November 1995

Authors:

A.S. Kaminskii, E.V. Lavrov

Keywords:

Bound Exciton, Isoelectronic Defects, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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