Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

157-162

DOI:

10.4028/www.scientific.net/MSF.196-201.157

Citation:

Y. Shi et al., "Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C", Materials Science Forum, Vols. 196-201, pp. 157-162, 1995

Online since:

November 1995

Export:

Price:

$35.00

In order to see related information, you need to Login.