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Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
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Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Optical Studies of Infrared Active Defects in...

Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

157-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.157

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Online since:

November 1995

Authors:

Y. Shi, Masashi Suezawa, Feng Mei Wu, M. Imai, Y.D. Zheng, Koji Sumino

Keywords:

Infrared Absorption, Radiation Defect, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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