Paper Titles

Excitons Bound to Isoelectronic C_3V-Defects B⁴₈₀ (1.1068 eV) in Silicon
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Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures
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Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
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Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
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EPR and IR Absorption of Defects in Isotopically Enriched Germanium
p.167

NMR Study of Impurity Electronic Structure and Dynamics
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Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
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The Role of Point Defects in Non-Stoichiometric III-V Compounds
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Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201EPR and IR Absorption of Defects in Isotopically...

EPR and IR Absorption of Defects in Isotopically Enriched Germanium

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.167

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Online since:

November 1995

Authors:

Lyudmila I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov

Keywords:

Defect, Germanium, Isotopical Enrichment

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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