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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Carbon Induced Inhomogeneous Strain Splitting of...

Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

133-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.133

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Online since:

November 1995

Authors:

A.N. Safonov, Edward C. Lightowlers, Gordon Davies

Keywords:

Bound Exciton, Carbon, Line-Broadening, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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