Paper Titles

Oxygen Complexing with Group II Impurities in Silicon
p.1303

Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers
p.1309

Effect of Carbon on Thermal Double Donor Formation in Silicon
p.1315

Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon
p.1321

Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon
p.1327

The Structure and Bonding of Iron-Acceptor Pairs in Silicon
p.1333

Ab Initio Study on Fe-Acceptor Pairing in Silicon
p.1339

Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon
p.1345

Recombination-Enhanced Migration of Interstitial Iron in Silicon
p.1351

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Ab-Initio Total Energy Calculation and the...

Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1327-1332

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1327

Citation:

Cite this paper

Online since:

November 1995

Authors:

H. Weihrich, Harald Overhof

Keywords:

3d Transition Metal, Elemental Semiconductors, Impurity Pairs

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: