Paper Titles

Interaction of Iron Donor with Transition-Metal Impurities in Silicon
p.689

Lithium-Gold-Related Photoluminescence in n-Type Silicon
p.695

Copper Species in Ultra-Pure Germanium Crystals
p.701

Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide
p.707

Electronic Properties of GaAs Doped with Copper
p.713

Zeeman Spectroscopy of Transition Metals in Hexagonal GaN
p.719

Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP
p.725

Piezo-Spectroscopic Study of the V³⁺ Photoluminescence in GaP:V:S
p.731

Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals
p.737

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electronic Properties of GaAs Doped with Copper

Electronic Properties of GaAs Doped with Copper

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

713-718

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.713

Citation:

Cite this paper

Online since:

November 1995

Authors:

B.H. Yang, H.P. Gislason

Keywords:

Compensation, Cu, Defect Complexes, Diffusion, GaAs

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: